发明名称 |
TECHNIQUES FOR REDUCING IMPACT OF ARRAY DISTURBS IN A SEMICONDUCTOR MEMORY DEVICE |
摘要 |
Techniques for reducing impact of array disturbs in a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for reducing impact of array disturbs in a semiconductor memory device by increasing the refresh rate to the semiconductor memory device based at least in part on a frequency of active operations. The method may comprise receiving a first refresh command including a first subarray address to perform a first refresh operation to a first logical subarray of memory cells associated with the first subarray address. The method may also comprise receiving a second refresh command including a second subarray address to perform a second refresh operation to a second logical subarray of memory cells associated with the second subarray address, wherein the second refresh command is received after a time period from the reception of the first refresh command. The method may further comprise performing a number of concurrent refresh operations during the time period. |
申请公布号 |
WO2011084499(A2) |
申请公布日期 |
2011.07.14 |
申请号 |
WO2010US60543 |
申请日期 |
2010.12.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LUTHRA, YOGESH;FISCH, DAVID, EDWARD |
分类号 |
G11C11/401;G11C11/4063;G11C11/4076;G11C11/408 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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