SEMICONDUCTOR DEVICES AND METHOD OF DRIVING THE SAME

摘要

PURPOSE: A semiconductor devices and a method of driving the same are provided to implement high integration by preventing the interference between nonvolatile memory cells. CONSTITUTION: In a semiconductor devices and a method of driving the same, a unit cell structure(1) comprises electrode layers(M1,M2), a bipolar resistance memory material film(RM1), and a unipolar resistance memory material film(RM2) The bipolar resistance memory material film and the unipolar resistance memory material film are formed between electrode layers which are opposite to each other. The bipolar resistance memory material film and the unipolar resistance memory material film are electrically serially connected. The electrode layers include resistance memory material films which are connected to conductive lines respectively.