| 摘要 |
PROBLEM TO BE SOLVED: To obtain an ESD protection element having a shallow trench isolation structure with an efficient ESD protection function without greatly increasing an occupied area. SOLUTION: A semiconductor device includes the ESD protection element with the shallow trench structure for element isolation. In the ESD protection element, an N-type region receiving a signal from an external connection terminal is arranged in the middle, a P-type region is arranged so as to surround a side face and a bottom face of the N-type region receiving the signal from the external connection terminal, an embedded N-type region is arranged so as to surround the side face and the bottom face of the P-type region, a P-type substrate terminal region is arranged around the embedded N-type region, and a trench isolation region is arranged around the P-type substrate terminal region. COPYRIGHT: (C)2011,JPO&INPIT |
