| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of measuring resistivity of an epitaxial layer, capable of measuring even the resistivity of an epitaxial layer doped at a high concentration on a silicon wafer more accurately and easily than before. SOLUTION: The method has measuring the resistivity of an epitaxial layer formed on a silicon single crystal wafer. At least, an SOI wafer is supplied as a monitor wafer to an epitaxial growth device at least, and a monitor epitaxial layer is grown under the same condition as the growth condition for an epitaxial layer to be grown on the main surface of the silicon single crystal wafer on the SOI layer of the SOI wafer. Thereafter, the film thickness and resistance value of the monitor epitaxial layer are measured, the resistivity of the monitor epitaxial layer is calculated, and the calculated resistivity is defined as the resistivity of the epitaxial layer to be grown on the main surface of the silicon single crystal wafer. COPYRIGHT: (C)2011,JPO&INPIT
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