发明名称 |
EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) INTEGRATED CIRCUIT WITH ON-CHIP RESISTORS AND METHOD OF FORMING THE SAME |
摘要 |
An electrical device is provided that in one embodiment includes a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness of less than 10 nm. A semiconductor device having a raised source region and a raised drain region of a single crystal semiconductor material of a first conductivity is present on a first surface of the semiconductor layer. A resistor composed of the single crystal semiconductor material of the first conductivity is present on a second surface of the semiconductor layer. A method of forming the aforementioned electrical device is also provided.
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申请公布号 |
US2011169089(A1) |
申请公布日期 |
2011.07.14 |
申请号 |
US20100687273 |
申请日期 |
2010.01.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;CHENG KANGGUO;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G. |
分类号 |
H01L27/12;H01L21/86 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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