| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material using a high molecular compound suitable for a base resin of a chemically amplified positive resist material, and to provide a pattern forming method. <P>SOLUTION: In the positive resist material, a resin formed by substituting a hydrogen atom in a carboxyl group with an acid-labile group shown by a general formula (1) is used as the base resin. In the general formula (1), R<SP>1</SP>, R<SP>2</SP>are an alkyl group, an alkoxy group, an alkanoyl group, an alkoxycarbonyl group, a hydroxy group, an aryl group, a halogen atom or a cyano group; R is a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group or an aryl group; m, n are an integer of 1-4, respectively, and G is a methylene group, an ethylene group, a vinylene group or -CH<SB>2</SB>-S-. The positive resist material is extremely high in alkaline dissolution rate contrast before and after exposure, has a high resolution, and is excellent in pattern shape and edge roughness after exposure, suppressed in acid diffusion velocity, and exhibits excellent etching resistance. <P>COPYRIGHT: (C)2011,JPO&INPIT |
