| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a JFET excellent in a break down voltage, and hard to be affected by the variations of impurity concentration or thickness or the like in a channel region. <P>SOLUTION: An aluminum film 7 is formed on the one face of an SiC substrate 9. Channel regions 4a, 4b comprising an SiC film are formed in the both sides of the aluminum film 7 as contacting to the aluminum film 7. Source electrodes 11a, 11b are formed on the channel regions 4a, 4b through source regions 5a, 5b. A gate electrode 13 is formed in the opposite side of the aluminum film side 7 in the channel regions 4a, 4b through p-type SiC films 2a, 2b. A drain region 6 is formed on the other side of the SiC substrate 9. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
