| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems of high cost, the complication and time-lengthening of a manufacturing process, deterioration in the quality of a film or the like in the self-organized nano-thin film formation technique using an etching step or a bottom-up system performed in the existing thin film manufacturing process. SOLUTION: In the method for manufacturing a self-organized nanostructured thin film, an intermediate layer vapor-deposited with a metal in which a flocculation phenomenon occurs is formed on a seed layer obtained by vapor-depositing a metal or semiconductor thin film on a single crystal or non-crystal substrate, thereafter, heat treatment is performed to form a pattern, and a target layer vapor-deposited with a dielectric substance, a semiconductor or a metal is formed on the above pattern. According to this invention, the problems in an etching step performed in the existing top-down system thin film manufacturing process are remarkably reduced, and further, the pattern of the nanostructure can be freely controlled in the nano-thin film structure. COPYRIGHT: (C)2011,JPO&INPIT |
