EPITAXIAL SUBSTRATE AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor element having a structure capable of improving a backward withstand voltage. SOLUTION: In a Schottky diode 11, a gallium nitride support base 13 includes a first surface 13a and a second surface 13b opposite from the first surface and has a carrier concentration exceeding 1×1018cm-3. A gallium nitride epitaxial layer 15 is disposed on the first surface 13a. An Ohmic electrode 17 is disposed on the second surface 13b. The Schottky electrode 19 is disposed on the gallium nitride epitaxial layer 15. A thickness D1 of the gallium nitride epitaxial layer 15 is at least 5μm and no more than 1,000μm. Also, the carrier density of the gallium nitride epitaxial layer 15 is at least 1×1014cm-3and no more than 1×1017cm-3. COPYRIGHT: (C)2011,JPO&INPIT