| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent contamination of the principal surface side of a semiconductor wafer in a process of grinding the back surface side of the semiconductor wafer. <P>SOLUTION: At an intersection of a scribe region 1b of the semiconductor wafer 20 whose back surface side 2b is to be ground, a plurality of insulating layers 3 are laminated over the principal surface 2a in the same manner as an insulating layer (first insulating layer) 3 constituting a wiring layer 5 laminated over a device region 1a. Moreover, in the same layer as wiring (uppermost wiring) formed in the uppermost wiring layer (uppermost wiring layer) 5c disposed at the uppermost layer among the plurality of wiring layers 5 formed for a device region 1a, a metal pattern 10 is formed. Furthermore, an insulating layer (second insulating layer) 9 covering the uppermost wiring is also formed over the metal pattern 10 so as to cover the same. <P>COPYRIGHT: (C)2011,JPO&INPIT |
