| 摘要 |
PROBLEM TO BE SOLVED: To provide a long-wavelength nitride semiconductor laser whose operating voltage etc., is improved. SOLUTION: A nitride semiconductor element includes a nitride semiconductor substrate having a semipolar plane as a principal plane, an n-side nitride semiconductor layer formed on the principal plane of the nitride semiconductor substrate, an active layer formed on the n-side nitride semiconductor layer and having a light-emitting layer made of a nitride semiconductor, and a p-side nitride semiconductor layer formed on the active layer. The n-side nitride semiconductor layer has an n-side nitride semiconductor layer made of In<SB>a</SB>Al<SB>b</SB>Ga<SB>1-a-b</SB>N (0<a<1, 0<b<1, and 0<a+b≤1) including n-type impurities, and including In and Al, wherein a mixed crystal ratio (b) of Al of the n-side nitride semiconductor layer including In and Al is≥0.1, and coordinates (a, b) showing a mixed crystal ratio (a) of In and the Al and mixed crystal ratio (b) of the n-side nitride semiconductor layer including In and Al are within a region enclosed with a straight line OA and a straight line OB on a coordinate system comprising the mixed crystal ratio of In as a lateral axis and the mixed crystal ratio of Al as a longitudinal axis. COPYRIGHT: (C)2011,JPO&INPIT |
