发明名称 OPTICAL MODULATION ELEMENT, CRYSTALLIZING DEVICE, CRYSTALLIZING METHOD, APPARATUS FOR MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, THIN-FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To form a mark structure, which is usable as an alignment mark in subsequent steps, on a semiconductor film in the same exposure step, in a step of obtaining a semiconductor of a crystal phase of large particle size from the semiconductor film. SOLUTION: This invention relates to an optical modulation element 3 including a light intensity modulation structure SP which forms a light intensity distribution for crystallization by modulating light, and a mark formation structure MK which is provided integrally with or independently of the light intensity modulation structure, and forms a light intensity distribution including a pattern in a prescribed shape by modulating light and also indicates a predetermined position of a crystallization region. Through this optical modulation element, a crystal nucleus is formed at an arbitrary position of the semiconductor film deposited on an insulating substrate to a prescribed thickness to grow crystal in a prescribed direction from the crystal nucleus, and the alignment mark AM can be formed at the arbitrary position of the semiconductor film in the same step. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011139082(A) 申请公布日期 2011.07.14
申请号 JP20110023893 申请日期 2011.02.07
申请人 SHARP CORP 发明人 OGAWA HIROYUKI;AKITA NORITAKA;TANIGUCHI YUKIO;HIRAMATSU MASAHITO;JUMONJI MASAYUKI;MATSUMURA MASAKIYO
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786 主分类号 H01L21/20
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