发明名称 |
OPTICAL MODULATION ELEMENT, CRYSTALLIZING DEVICE, CRYSTALLIZING METHOD, APPARATUS FOR MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR SUBSTRATE, THIN-FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To form a mark structure, which is usable as an alignment mark in subsequent steps, on a semiconductor film in the same exposure step, in a step of obtaining a semiconductor of a crystal phase of large particle size from the semiconductor film. SOLUTION: This invention relates to an optical modulation element 3 including a light intensity modulation structure SP which forms a light intensity distribution for crystallization by modulating light, and a mark formation structure MK which is provided integrally with or independently of the light intensity modulation structure, and forms a light intensity distribution including a pattern in a prescribed shape by modulating light and also indicates a predetermined position of a crystallization region. Through this optical modulation element, a crystal nucleus is formed at an arbitrary position of the semiconductor film deposited on an insulating substrate to a prescribed thickness to grow crystal in a prescribed direction from the crystal nucleus, and the alignment mark AM can be formed at the arbitrary position of the semiconductor film in the same step. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011139082(A) |
申请公布日期 |
2011.07.14 |
申请号 |
JP20110023893 |
申请日期 |
2011.02.07 |
申请人 |
SHARP CORP |
发明人 |
OGAWA HIROYUKI;AKITA NORITAKA;TANIGUCHI YUKIO;HIRAMATSU MASAHITO;JUMONJI MASAYUKI;MATSUMURA MASAKIYO |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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