| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD film deposition apparatus capable of forming a film having uniform and favorable quality and uniform and favorable barrier property on a long substrate, and a film deposition method using the film deposition apparatus. SOLUTION: The plasma CVD film deposition apparatus 10 that continuously deposits the film on the substrate includes: film deposition rollers 20 comprising a first film deposition roller 20A and a second film deposition roller 20B; a vacuum chamber 12 that houses the film deposition rollers and has at least one evacuation aperture 14 that is located between the first and second film deposition rollers and is disposed so that it becomes mirror symmetric to a first symmetric plane and a second symmetry plane or disposed so that it becomes axially symmetric to a cross line 19 of the first and second symmetric planes crossing each other, wherein the first symmetric plane 18A perpendicularly bisects a line segment representing the shortest distance between a rotational axis 20Aa and a rotational axis 20Ba and the second symmetric plane 18B is perpendicular to the first symmetric plane 18A and bisects the total length of the first and second film deposition rollers 20A and 20B; a film deposition gas feeding part 30; and a vacuum pump installed outside the vacuum chamber. COPYRIGHT: (C)2011,JPO&INPIT
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