| 摘要 |
A method of programming a nonvolatile memory device comprises a bit line voltage set-up step of receiving a program command and data to be programmed and setting up a voltage of a selected bit line according to a state of program data; a program step of supplying a program voltage to a word line selected for a program in response to a control signal for setting up the program voltage, supplying a first pass voltage to unselected word lines, and then performing the program; and a program verification step of, in response to a control signal which is subsequent to the control signal for setting up the program voltage and is used to set a verification voltage, performing a program verification operation by supplying the verification voltage to the selected word line.
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