PROGRAMMING PHASE CHANGE MEMORIES USING OVONIC THRESHOLD SWITCHES
摘要
A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.
申请公布号
WO2011084266(A2)
申请公布日期
2011.07.14
申请号
WO2010US58233
申请日期
2010.11.29
申请人
INTEL CORPORATION;LANGTRY, TIMOTHY C.;DODGE, RICHARD;CASTRO, HERNAN;KAU, DERCHANG;TANG, STEPHAN;HIRST, JEREMY
发明人
LANGTRY, TIMOTHY C.;DODGE, RICHARD;CASTRO, HERNAN;KAU, DERCHANG;TANG, STEPHAN;HIRST, JEREMY
