发明名称 PHASE-CHANGE STRUCTURE, METHOD FOR FORMING PHASE-CHANGE SUBSTANCE, PHASE-CHANGE MEMORY DEVICE, AND METHOD FOR MANUFACTURING PHASE-CHANGE MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a phase-change structure which contains a phase-change substance layer pattern of a minute size, having a superior step coverage or gap-fill characteristics for keeping a resistance margin and maintenance characteristic, in HARS (high-aspect-ratio-structure). SOLUTION: The phase-change structure fills partially the HARS, fills a first phase-change substance layer pattern, including a first phase-change substance and the remainder of the HARS, and includes a second phase-change substance having a composition being different from the first phase-change substance. A phase-change substance layer pattern, which the HARS is fully filled through an in-situ reflow mechanism without defects, is formed. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011139070(A) 申请公布日期 2011.07.14
申请号 JP20100293210 申请日期 2010.12.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 OH JIN-HO;PARK JEONGHEE;KANG MAN-SUG;CHOI BYOUNG-DEOK;OH GYUHWAN;PARK HYE-YOUNG;PARK DOO-HWAN
分类号 H01L27/105;H01L45/00 主分类号 H01L27/105
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