| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for semiconductor devices, which is used for manufacturing a thin-type semiconductor device subjected to back grinding machining and back CMP processing, and in which adequate backgrinding is performed, a grinding speed is increased, and the efficiency of a productivity is improved. SOLUTION: In the substrate 10 for semiconductor devices, a structure transition layer 12 is formed inside a crystalline silicon substrate 11. The structure transition layer 12 does not form a conductivity type region, is formed by implanting ions, and changes to a crystal structure different from that of silicon. COPYRIGHT: (C)2011,JPO&INPIT
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