| 发明名称 |
HIGH-BETA BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURE |
| 摘要 |
An NPN bipolar junction transistor is disclosed that exhibits a collector-to-emitter breakdown voltage greater than 10 volts and a beta greater than 300. The large value of beta is obtained by fabricating the transistor with an extra N-type layer that reduces recombination of electrons and holes.
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| 申请公布号 |
US2011169137(A1) |
申请公布日期 |
2011.07.14 |
| 申请号 |
US20100723953 |
申请日期 |
2010.03.15 |
| 申请人 |
LIN CHENG-CHI;TU SHUO-LUN;LIEN SHIH-CHIN |
发明人 |
LIN CHENG-CHI;TU SHUO-LUN;LIEN SHIH-CHIN |
| 分类号 |
H01L29/73;H01L21/331 |
主分类号 |
H01L29/73 |
| 代理机构 |
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