| 摘要 |
The semiconductor device comprises a first region, a guard ring surrounding the first region, and a second region outside of the guard ring. The first region includes a first electrode made of a first film which has conductivity. A surface of the first electrode in the first region is not covered with the second film. The guard ring includes the first film covering an inner wall of a groove having a recess shape, and a second film as an insulating film covering at least one portion of a surface of the first film in the groove.
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