发明名称 |
MOSFET AND METHOD FOR MANUFACTURING MOSFET |
摘要 |
A MOSFET includes: a silicon carbide (SiC) substrate having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer formed on the main surface of the SiC substrate; and an insulating film formed in contact with a surface of the semiconductor layer. The MOSFET has a sub-threshold slope of not more than 0.4 V/Decade.
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申请公布号 |
US2011169016(A1) |
申请公布日期 |
2011.07.14 |
申请号 |
US201013063298 |
申请日期 |
2010.03.23 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
WADA KEIJI;HARADA SHIN;MASUDA TAKEYOSHI;HONAGA MISAKO |
分类号 |
H01L29/78;H01L21/316;H01L29/161 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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