SUPERFILLED METAL CONTACT VIAS FOR SEMICONDUCTOR DEVICES

摘要

In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole (112) can be formed in a dielectric layer (120) to at least partially expose a region (108) including at least one of semiconductor or conductive material. A seed layer (143) can be deposited over a major surface (118) of the dielectric layer and over a surface within the hole (112). In one embodiment, the seed layer (143) can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer (132) consisting essentially of cobalt can be electroplated over the seed layer (143) within the hole (112) to form a contact via (110) in electrically conductive communication with the region.