| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide: a solid-state image pickup device having a photoelectric conversion part formed on a light-receiving surface side of a semiconductor substrate with an improved transfer efficiency without obstructing miniaturization of pixels; a method of manufacturing the same; and an electronic apparatus. <P>SOLUTION: A vertical transfer path 50 including a connection part 21, a potential barrier layer 22, and a charge storage layer 23 laminated in a vertical direction is formed in the semiconductor substrate 17. On a rear side of the semiconductor substrate 17, the photoelectric conversion part 32 held by a lower electrode 31 and an upper electrode 33 is formed, and the lower electrode 31 and the connection part 21 are electrically connected with a contact plug 29. Thus, a signal charge generated by the photoelectric conversion part is read out by the connection part 21 via the contact plug 29 and overflowed to the charge storage layer 23 in the vertical direction. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
