发明名称 INTEGRATED CIRCUIT CAPACITOR STRUCTURE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a capacitor having a metal-insulator-metal structure. <P>SOLUTION: The capacitor includes a lower electrode, and a dielectric layer that is interposed between an upper electrode and the lower electrode. A first voltage is applied to the upper electrode; and a second voltage, which is different from the first voltage, is applied to the lower electrode. A wire, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011139092(A) 申请公布日期 2011.07.14
申请号 JP20110051667 申请日期 2011.03.09
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 AHN JEONG-HOON;LEE KYUNG-TAE;JUNG MU-KYENG;LEE YONG-JUN
分类号 H01L21/3205;H01L21/822;H01G4/00;H01L21/02;H01L21/28;H01L21/768;H01L21/82;H01L21/8242;H01L23/522;H01L27/04;H01L27/08;H01L27/108 主分类号 H01L21/3205
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