| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon semiconductor substrate of which a surface layer part of a silicon substrate is formed of a silicon oxide layer and a single crystalline silicon carbide layer. SOLUTION: The following steps are carried out sequentially: a step of (1) preparing the silicon semiconductor substrate of which the surface layer part is formed of an embedded silicon oxide film layer and a surface silicon oxide film layer, and (2) implanting carbon ions in a silicon layer between the embedded oxide film layer and the oxide film layer in the silicon substrate to form a carbon-containing layer with silicon and carbon mixed; a step of (3) removing a surface oxide film layer; a step of (4) heat-treating the silicon substrate and turning the carbon-containing layer into a silicon carbide film layer; and a step of (5) removing the oxide film formed on a surface of the silicon substrate. COPYRIGHT: (C)2011,JPO&INPIT
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