| 摘要 |
Nanoelectromechanical devices use a cantilevered beam supported by a base. The cantilevered beam is constructed with a nanoscale gap (e.g., less than 10 nm) separating the cantilevered beam from an electrical structure. A low voltage (e.g., less than 2 volts) applied to the cantilevered beam can cause the beam to bend and make contact with the electrical structure. High switching speeds (e.g., less than 10 ns) can be provided. The electrical structure can be a second cantilevered beam or another structure.
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