发明名称 |
METHODS AND APPARATUS OF FLUORINE PASSIVATION |
摘要 |
The present disclosure provides methods and apparatus of fluorine passivation in IC device fabrication. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate and passivating a surface of the substrate with a mixture of hydrofluoric acid and alcohol to form a fluorine-passivated surface. The method further includes forming a gate dielectric layer over the fluorine-passivated surface, and then forming a metal gate electrode over the gate dielectric layer. A semiconductor device fabricated by such a method is also disclosed.
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申请公布号 |
US2011169104(A1) |
申请公布日期 |
2011.07.14 |
申请号 |
US20100687574 |
申请日期 |
2010.01.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
XU JEFF J.;YAO LIANG-GI;KUAN TA-MING |
分类号 |
H01L29/78;H01L21/28 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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