| 摘要 |
A patterned sapphire substrate manufacturing method uses two-section dip etching procedure to improve the lateral etching rate at each etching position, so as to produce a concave-convex pattern composed of a plurality of triangular pyramid structures protruded from a surface onto an upper surface of a sapphire substrate, such that less planar area of the sapphire substrate surface will remain, and a mixed solution of sulfuric acid and phosphoric acid is used in a first dip etching step, and pure phosphoric acid or a mixed solution of sulfuric acid and phosphoric acid is used in a second dip etching step for etching the sapphire substrate to control the inclination of each triangular pyramid structure precisely, and providing a better light extraction rate for later manufactured light emitting diodes.
|
