| 摘要 |
A method and structure for determining crystal orientation on wafers accurately. The method comprises (a) providing a semiconductor wafer, forming a mask layer on the surface of the wafer, patterning and etching the mask layer to forming two opposite groups of concentric circular arcs or a group of concentric circular arcs and the circular center of the group of concentric circular arcs, wherein each group of concentric circular arcs includes at least two concentric circular arcs, on every concentric circular arcs making a series of circular windows which is exposed on the surface of the wafer, wherein the circular windows are staggered arrangement, (b) anisotropic etching the wafer, thereby hexagon recesses are formed under the circular windows, (c) determining the crystal orientation according to the relative position of the corners of the adjacent hexagon recesses. |
