SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY

摘要

A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.