| 摘要 |
A method and apparatus for growing a single crystal Kb2Cl5 material in a growth furnace comprising an upper zone set at 480° C. A single crystal Kb2Cl5 material is grown from a single Kb2Cl5 grain until a eutectic point is reached. The upper zone is cooled at 1°/hour to 380° C. The single crystal Kb2Cl5 material is annealed. The single crystal Kb2Cl5 material is cooled at 10°/hour to room temperature. Optionally, the method further includes loading an ampoule with Kb2Cl5 powder, the ampoule including a plug, which includes a seeding well and an aperture. The Kb2Cl5 powder is melted, thereby generating a melt. The melt is frozen to capture a polycrystalline Kb2Cl5 material in the seeding well, thereby generating a polycrystalline Kb2Cl5 seed. The ampoule is loaded into the growth furnace. The polycrystalline Kb2Cl5 material is melted except for the polycrystalline Kb2Cl5 seed, the polycrystalline Kb2Cl5 seed including the single Kb2Cl5 grain. The polycrystalline Kb2Cl5 material is grown until the single Kb2Cl5 grain is isolated by the aperture. |
