READ TRANSISTOR FOR SINGLE POLY NON-VOLATILE MEMORY USING BODY CONTACTED SOI DEVICE
摘要
<p>A read transistor for single poly non-volatile memory using a body contacted SOI transistor and a method of manufacturing the same is provided. The non-volatile random access memory is formed in silicon on insulator (SOI). The non-volatile random access memory includes a read field effect transistor (FET) having a body contact formed in the silicon of the SOI. The body contact is in electrical contact with a diffusion region under a gate of the read FET.</p>
申请公布号
WO2011083041(A1)
申请公布日期
2011.07.14
申请号
WO2010EP70366
申请日期
2010.12.21
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;KUMAR, ARVIND;CHOU, ANTHONY, I-CHIH