发明名称 REGION DIVIDED SUBSTRATE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a region divided substrate more reducing a resistance of an extraction conductive region compared with conventional divided substrates when a partial region is used as the extraction conductive region, using an arbitrary substrate material such as a conductive, semiconductive, or insulating material, and having fewer limitations in its application range, and a semiconductor device including the same, and also to provide their manufacturing methods. <P>SOLUTION: The region divided substrate A10 provided with: a substrate 30 divided into a plurality of partial regions Ce by trenches 31a formed so as to penetrate the substrate 30 from a first surface S1 to a second surface S2 of the substrate 30; a conductive layer 35 having an electric conductivity higher than an electric conductivity of the substrate 30 on a side wall of each of the partial regions Ce formed by the trenches 31a from a side of the first surface S1 to a side of the second surface S2, and; an insulating member 31b embedded in each of the trenches 31a through the conductive layer 35. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011139018(A) 申请公布日期 2011.07.14
申请号 JP20100176742 申请日期 2010.08.05
申请人 DENSO CORP 发明人 FUJII TETSUO;TANAKA MASAYA;GOTO KEISUKE
分类号 H01L21/76;B81B3/00;B81C1/00;G01C19/56;G01P9/04;G01P15/08;G01P15/125;H01L21/3205;H01L23/52;H01L29/84 主分类号 H01L21/76
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