| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved method of manufacturing a semiconductor device including a GaN-containing heterogeneous layer stack and a surface roughened for light transmittance. <P>SOLUTION: The method includes the steps of growing a group III-V material conduction layer 2, forming a mask on the conduction layer 2 to expose a first part of the conduction layer 2, and partially decomposing the first exposed part of the conduction layer 2. Preferably, re-deposition occurs at one step with decomposition to obtain a textured surface based on crystal facets 31 of a plurality of grown crystals 3. The resultant device preferably includes a light-emitting element. Preferably, the conduction layer is present on the upper side. <P>COPYRIGHT: (C)2011,JPO&INPIT |
