POWER SEMICONDUCTOR DEVICE WITH NEW GUARD RING TERMINATION DESIGN AND METHOD FOR PRODUCING SAME

摘要

PROBLEM TO BE SOLVED: To provide a power diode improving a blocking capacity and a method for producing such a device. SOLUTION: The power diode 1 includes a second conductive type second layer 10 arranged in a central region 22 and a third conductive layer 16 arranged on the second layer 10 on the first main-side 8 of a first conductive type first layer 2. The power diode 1 further has a fourth conductive layer 14 arranged on the first layer 2 on the second main-side 12 on the reverse side. The power diode 1 further includes a junction termination region 24 surrounding the periphery of the second layer 10 by a second conductive type self-contained sub-region 26. The power diode 1 further has a second conductive type self-contained spacer sub-region 36 and a life control region 34 between the second layer 10 and the junction termination region 24. A fault reducing a carrier life is limited in the central region 22 while such a fault is not implanted into the junction termination region 24. COPYRIGHT: (C)2011,JPO&INPIT