发明名称 |
METHOD FOR FABRICATING A RESISTOR FOR A RESISTANCE RANDOM ACCESS MEMORY |
摘要 |
A method for fabricating a resistor for a resistance random access memory (RRAM) includes: (a) forming a first electrode over a substrate; (b) forming a variable resistance layer of zirconium oxide on the first electrode under a working temperature, which ranges from 175° C. to 225° C.; and (c) forming a second electrode of Ti on the variable resistance layer.
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申请公布号 |
US2011171811(A1) |
申请公布日期 |
2011.07.14 |
申请号 |
US20100793833 |
申请日期 |
2010.06.04 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
TSENG TSEUNG-YUEN;WANG SHENG-YU;TSAI CHEN-HAN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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