发明名称 PATTERNING METHOD FOR HIGH DENSITY PILLAR STRUCTURES
摘要 A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
申请公布号 US2011171815(A1) 申请公布日期 2011.07.14
申请号 US20100686217 申请日期 2010.01.12
申请人 SANDISK 3D LLC 发明人 NGUYEN NATALIE;POON PAUL WAI KIE;RADIGAN STEVEN J.;KONEVECKI MICHAEL;CHEN YUNG-TIN;MAKALA RAGHUVEER;DUNTON VANCE
分类号 H01L21/30 主分类号 H01L21/30
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