| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve adhesiveness of an insulating protection film and a metal layer, and improve reliability of an element. <P>SOLUTION: In the method of manufacturing a semiconductor element, an epitaxial growth layer formed of a group III nitride compound semiconductor layer is crystal-grown on a crystal growth substrate. A final growth layer of the epitaxial growth layer is joined to a support substrate through a metal layer. A base layer as an initial growth layer of the epitaxial growth layer serves as an uppermost layer of the epitaxial growth layer on the support substrate by removing the crystal growth substrate. From a side of the final growth layer, a first layer formed of nitride reactive metal, a second layer formed of metal which is resistant to chlorine plasma etching and can be wet-etched, and a third layer formed of nitrogen-reactive metal which is resistant to the wet-etching are formed. An element isolation groove is formed so as to expose a surface of the second layer by etching from the base layer of the semiconductor element by using chlorine plasma. The second layer exposed from a bottom surface of the element isolation groove is removed by wet-etching, and the third layer is exposed from the bottom surface of the element isolation groove, and the insulating protection film is coated on the element isolation groove. <P>COPYRIGHT: (C)2011,JPO&INPIT |
