| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reactor having a characteristic of a low temperature growth thin film, in which photoelectric elements and electronic elements of various kinds are improved and quality of an integrated circuit element is improved. <P>SOLUTION: A reactor 500 includes a first heating unit 100 and a second heating unit 200. The first heating unit 100 and the second heating unit 200 are arranged to face each other, forming a reactive region 150. An angle is formed with the inside surface of the first heating unit 100 and the inside surface of the second heating unit 200, and a temperature of the first heating unit 100 and a temperature of the second heating unit 200 are separately controlled. At least one substrate 300 is arranged on the first heating unit 100, and at least one substrate 300 is positioned between the first heating unit 100 and the second heating unit 200, with a thin film formed on at least one substrate 300 on the first heating unit 100. <P>COPYRIGHT: (C)2011,JPO&INPIT |
