| 摘要 |
A non-volatile semiconductor memory device includes a memory cell array including a data storage area and a reprogram information storage area, and a reprogram information holder circuit configured to store data read from the reprogram information storage area. A reference level switch circuit selects one from a plurality of read reference levels generated by a reference level generator circuit, based on an output of the reprogram information holder circuit. A read circuit reads memory cell data from the data storage area 104 based on the selected read reference level, and outputs the memory cell data. Therefore, a degradation in data hold capability due to reprogram operation is reduced or prevented. In addition, intended operation is achieved without being affected by interruption or resumption of power supply, a circuit size is reduced, and high-speed read operation is achieved.
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