| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an MIS transistor with a large drive current, a small leakage current, and low power consumption; and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes a semiconductor substrate having a channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film, a source diffusion layer and drain diffusion layer arranged so as to sandwich the channel region in the semiconductor substrate, a first pocket impurity layer formed in the semiconductor substrate on a source diffusion layer side, and a second pocket impurity layer formed in the semiconductor substrate on a drain diffusion layer side. The first pocket impurity layer has a concentration peak in a position deeper than a concentration peak position of an extension impurity layer of the source diffusion layer. The second pocket impurity layer has a concentration peak in a position shallower than a concentration peak position of an extension impurity layer of the drain diffusion layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
