SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To provide a top-gate type semiconductor element using an oxide semiconductor having a short channel length L to allow refining, and to provide a method for manufacturing the same.

SOLUTION: The semiconductor element includes an oxide semiconductor layer 107 on an insulating surface, a source electrode layer 109a and a drain electrode layer 109b on the oxide semiconductor layer, a gate insulating layer on the oxide semiconductor layer and the source and drain electrode layers, and a gate electrode layer on the gate insulating layer. The source and drain electrode layers have sidewalls and the sidewalls are in contact with an upper surface of the oxide semiconductor layer.

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