发明名称
摘要 PROBLEM TO BE SOLVED: To provide a photoresist remover composition capable of easily removing photoresist residue produced in dry etching of a ferroelectric film at a low temperature in a short time. SOLUTION: The photoresist remover composition comprises an aqueous solution containing oxalic acid and a polyoxyalkylene alkyl ether phosphate.
申请公布号 JP4724959(B2) 申请公布日期 2011.07.13
申请号 JP20010201171 申请日期 2001.07.02
申请人 发明人
分类号 G03F7/42;H01L21/027 主分类号 G03F7/42
代理机构 代理人
主权项
地址