发明名称 |
Dense arrays and charge storage devices, and methods for making same |
摘要 |
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing. |
申请公布号 |
EP2323164(A3) |
申请公布日期 |
2011.07.13 |
申请号 |
EP20100011125 |
申请日期 |
2001.08.13 |
申请人 |
SANDISK 3D LLC |
发明人 |
LEE, THOMAS H.;CLEEVES, JAMES M.;SUBRAMANIAN, VIVEK;WALKER, ANDREW J.;PETTI, CHRISTOPHER;KOUZNETZOV, IGOR G.;JOHNSON, MARK G.;FARMWALD, PAUL M.;HERNER, BRAD |
分类号 |
H01L21/20;H01L27/115;G11C11/34;H01L21/336;H01L21/822;H01L21/8246;H01L21/8247;H01L21/84;H01L27/06;H01L27/10;H01L27/112;H01L27/12;H01L27/14;H01L29/423;H01L29/786;H01L29/788;H01L29/792;H01L29/861 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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