Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof

摘要

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb x La y )(Zr z Ti( 1-z )O 3 [wherein 0.9 < x < 1.3, 0 ‰¤ y < 0.1, and 0 ‰¤ z < 0.9 are satisfied] with a composite oxide (B) including P (phosphorus).