发明名称 |
SEMICONDUCTOR DEVICES HAVING DUAL TRENCHES AND METHODS OF FABRICATING THE SAME, AND ELECTRONIC SYSTEM HAVING THE SAME |
摘要 |
<p>PURPOSE: A semiconductor device with dual trenches and a manufacturing method thereof, and an electronic system are provided to obtain a stable active separation area and reduce the amount of using silazane insulators, thereby increasing production. CONSTITUTION: A cell area includes a cell trench. A semiconductor substrate includes a peripheral area which has a peripheral trench. A cell trench is filled with a core insulator(260) which has high mobility. The peripheral trench is filled with a core insulating material.</p> |
申请公布号 |
KR20110080665(A) |
申请公布日期 |
2011.07.13 |
申请号 |
KR20100000997 |
申请日期 |
2010.01.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DONG WON;SIM, JAE HWANG;KIM, KEON SOO;LEE, YOUNG HO |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|