发明名称 SEMICONDUCTOR DEVICES HAVING DUAL TRENCHES AND METHODS OF FABRICATING THE SAME, AND ELECTRONIC SYSTEM HAVING THE SAME
摘要 <p>PURPOSE: A semiconductor device with dual trenches and a manufacturing method thereof, and an electronic system are provided to obtain a stable active separation area and reduce the amount of using silazane insulators, thereby increasing production. CONSTITUTION: A cell area includes a cell trench. A semiconductor substrate includes a peripheral area which has a peripheral trench. A cell trench is filled with a core insulator(260) which has high mobility. The peripheral trench is filled with a core insulating material.</p>
申请公布号 KR20110080665(A) 申请公布日期 2011.07.13
申请号 KR20100000997 申请日期 2010.01.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DONG WON;SIM, JAE HWANG;KIM, KEON SOO;LEE, YOUNG HO
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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