发明名称 HIGH-RESOLUTION X-RAY DIFFRACTION MEASUREMENT WITH ENHANCED SENSITIVITY
摘要 PURPOSE: A high-resolution X-ray diffraction measuring method is provided to improve the accuracy and sensitivity in high-resolution X-ray diffraction measurement for an epitaxial thin film and other crystal structures. CONSTITUTION: A high-resolution X-ray diffraction measuring method comprises a step of orienting a converging beam(30) of X-rays toward the surface of a sample(22) having first and second crystalline layers of different crystalline properties, a step of sensing X-rays that are diffracted from the sample while decomposing detected X-rays in order to generate a first diffraction spectrum including at least first and second diffraction peaks, a step of locating a beam blocker(49) in the converging beam in order to block the range of angle including the first diffraction peak, a step of sensing X-rays that are diffracted from the sample while the beam blocker is located in the converging beam in order to generate a second diffraction spectrum including at least the second diffraction peak, and a step of analyzing the second diffraction spectrum in order to distinguish the characteristic of the second crystalline layer.
申请公布号 KR20110081031(A) 申请公布日期 2011.07.13
申请号 KR20100108488 申请日期 2010.11.03
申请人 JORDAN VALLEY SEMICONDUCTORS LTD. 发明人 YOKHIN BORIS;MAZOR ISAAC;KROHMAL ALEXANDER;GVIRTZMAN AMOS;OFENGENDEN GENNADY;BERMAN DAVID;WORMINGTON MATTHEW
分类号 G01N23/207;G01N23/20 主分类号 G01N23/207
代理机构 代理人
主权项
地址