发明名称 |
MIIM DIODES HAVING STACKED STRUCTURE |
摘要 |
<p>A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arraigned as follows. An insulating region has a trench formed therein. The trench has a bottom and side walls. The first electrode, which comprises a first metal, is on the side walls and over the bottom of the trench. A first insulator has a first interface with the first electrode. At least a portion of the first insulator is within the trench. A second insulator has a second interface with the first insulator. At least a portion of the second insulator is within the trench. The second electrode, which comprises a second metal, is in contact with the second insulator. The second electrode at least partially fills the trench.</p> |
申请公布号 |
EP2342768(A1) |
申请公布日期 |
2011.07.13 |
申请号 |
EP20090792784 |
申请日期 |
2009.09.21 |
申请人 |
SANDISK 3D LLC |
发明人 |
SEKAR, DEEPAK, C.;KUMAR, TANMAY;RABKIN, PETER;PING, ER-XUAN;CHEN, XIYING |
分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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