| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to prevent a short between a burial gate electrode and a bit line contact by forming the bit line contact by a self align method in a semiconductor device. CONSTITUTION: The first insulating layer pattern(102) is formed on a semiconductor substrate. A spacer(104) having etching selectivity different from that of the first insulating layer pattern is formed on a side wall of the first insulating layer pattern. A trench(106) is formed by etching the semiconductor substrate with an etching mask. The buried type gate electrode filling in a lower part of the trench bottom is formed. The second insulating layer having the height equalized to the first insulating layer pattern by filling up the trench is formed. The first insulating layer pattern is eliminated and a bit line contact hole(116) is formed by using the etching selectivity of the spacer and the first insulating layer.
|
