发明名称 |
PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device (100) comprises a photovoltaic layer (3) having a p-layer (41), an i-layer (42) and an n-layer stacked on top of a substrate (1), wherein the n-layer comprises a nitrogen-containing n-layer (43) and an interface treatment layer (44) formed on the opposite surface of the nitrogen-containing n-layer (44) to the substrate (1), the nitrogen-containing n-layer (43) comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer (44) has a crystallization ratio of not less than 1 and not more than 6. |
申请公布号 |
EP2343741(A1) |
申请公布日期 |
2011.07.13 |
申请号 |
EP20090823384 |
申请日期 |
2009.07.08 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
TSURUGA, SHIGENORI;YAMAGUCHI, KENGO;GOYA, SANEYUKI;SAKAI, SATOSHI |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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