| 摘要 |
<p>PURPOSE: A semiconductor device is provided to implement an NMOS transistor for protecting ESD while preventing the local concentration of a current on the NMOS transistor. CONSTITUTION: In a semiconductor device, a drain region(202) is arranged on the side and bottom of a trench separation region. A drain extension region(203) is formed by a conductive impurity diffusion region. A drain contact region is formed by the conductive impurity diffusion region.</p> |
